E-GRADE® THEMAH

E-GRADE® THEMAH provides safer handling alternatives to tetramethylammonium hydroxide (TMAH). Both are strong, metal ion-free organic bases suited for etching silicon and for photoresist developing and stripping applications. In addition, Huntsman has developed a library of many new experimental quaternary ammonium compounds (quats), enabling a range of products for different applications. These are available in aqueous and solvent-based formulations. Huntsman’s platform of TMAH alternatives is being developed with the aspiration of providing less toxic alternatives to TMAH for the next generation of semiconductor cleans.

Functions: Cleaning Agent, Solvent

Chemical Family: Chemical Mixtures & Blends

End Uses: Printed Circuit Boards, Semiconductor, ̇Photoresists

Applicable Processes: Chemical Mechanical Planarization (CMP), Etching Applications, Photoresist Strippers Manufacturing, Semiconductor Etching

Features: Control Ferrous Metal Corrosion, Ease of Processing, Excellent Dispersibility, Good Solubility, High Purity, High pH, Low Corrosion, Low Trace Metals, Low Volatility, Reduced Processing Time

Safety Data Sheet
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Enhanced TDS

Identification & Functionality

Features & Benefits

Industrial Additives Features
Product Features
  • Organic base
  • High purity, low trace metal
  • TMAH replacement
  • Available at 45 wt%
  • Water or solvent based
  • Low metal corrosion
  • CMP slurries and pCMP cleans
  • PERR

Applications & Uses

Properties

Physical Form
Soluble In

Regulatory & Compliance

Technical Details & Test Data

Test Data

  • Cu wafer treated with E-GRADE® THEMAH demonstrated smoother surface compared to Cu treated with TMAH. (pH 12.8, 30°C for 30 min)

  • Silicon wafers, treated with E-GRADE® THEMAH, demonstrate significant reductions in reflectivity and improvement in uniformity when compared to wafers treated with TMAH.
  • This texturization reduces light reflection and improves absorption for photovoltaic devices.
pH - Concentration Dependence

Alkalinity: TMAH > Choline > THEMAH

TiN Etch with Hydrogen Peroxide

  • At appropriate pH and concentration, E-GRADE® THEMAH with HO can be used for titanium nitride (TiN) strip (etch rate >20 nm/min), which offers wider and more controllable strip rate window comparing to TMAH.

Packaging & Availability

Regional Availability
  • Global

Other

Appearance (SDS)
Liquid
Color (SDS)
Colorless
Odor (SDS)
Amine like
Chemical Properties
ValueUnitsTest Method / Conditions
pH12.9-
Physical Properties
ValueUnitsTest Method / Conditions
Molecular Weight181.0 g/molg/mol